EVO 25/50 MBE
Small Scale Research Tools for Epitaxial Layer Growth
- MBE system optimised for 2 inch wafer growth
- Compact design and small system footprint
- Flexible configurations, from topological insulators to semiconductors and metal oxides
- In-situ growth monitoring
- Reliable & fast sample transfer
- Growth process controlled by advanced software
- Designed as a module of a Materials Innovation Platform (MIP)
The EVO-25/50 MBEs are deposition tools for explorative materials research under UHV conditions on substrates up to 2 inches in diameter. They are flexible system platforms suitable for a large range of MBE applications such as the growth of 2D materials, intermetallic compounds, oxide heterostructures or semiconductors. The EVO-25/50 MBEs include superior evaporation control software and offers multiple ports for in-situ characterisation.
The EVO-25/50 MBE systems are dedicated growth systems with a load lock chamber and with an optional preparation/storage chamber. The substrate sizes are either 1” (EVO-25) or 2” (EVO-50). Alternatively, the systems can be adapted to surface science sample plates. The carefully designed chamber with up to 10 effusion cells shows excellent thickness uniformity for all substrate sizes.
Due to the small footprint the EVO-25/50 MBEs can be configured to be either standalone systems with a buffer chamber and sample load lock or integrated with a linear transfer line or a radial distribution chamber as a part of a Materials Innovation Platform (MIP).
All EVO-25/50 MBE systems come with the MISTRAL control system together with a powerful evaporation control software. The control system is based on certified standard components for supreme reliability and provides a graphical status overview of all sensor values. With this software bundle, experiments can be conducted under well-controlled and reproducible conditions.
Software: MISTRAL & Evaporation Control
The EVO-25/50 MBEs include the MISTRAL control system together with a powerful evaporation control software. The control system is based on certified standard components for supreme reliability and provides a graphical status overview of all sensor values. Integrated safety interlocks protect the UHV system in case of power failure or a drop in water flow.
The evaporation control software offers a powerful script editor for programming individual process recipes. Additionally, 24/7 data logging of all relevant system parameters is included.
With this software bundle, experiments can be conducted under well-controlled and reproducible conditions.
The EVO-25/50 MBEs are designed for forefront research. Our customers use their systems for a variety of materials systems, such as:
- Topological Insulators
- 2D Materials, e.g. Transition metal dichalcogenides (TMDCs)
- Intermetallic Compounds
- Thin Film Solar Cells
< 1×10-10 mbar
Double walled, designed for LN2
Up to 2“ diameter
Up to 10 ports DN63CF
Equipped with Viewport Shutters
Growth control software included
Quartz Micro Balance
Beam Flux Monitor
Quadrupole mass analyser (RGA)
* Specifications for standard configuration. Customisations can influence specifications.
For full specifications and more information about product options, please do not hesitate to contact your local sales representative. Find the contact details here: Contact Us
Engineering Metal Oxidation Using Epitaxial Strain
The oxides of platinum group metals are promising for future electronics and spintronics due to the delicate interplay of spin-orbit coupling and electron correlation energies. However, their synthesis as thin films remains challenging...
EVO-50 MBE System: Next Generation of Customisable MBE Solution
The EVO-50 MBE System is designed to fulfil the highest and most stringent requirements of modern thin-film deposition. It is suitable and optimised for the growth of ultra-high purity semiconductors and related material systems.
MBE Solutions: Modular MBE Systems
The MBE Solution is comprised of Lab10 MBE, EVO-25/-50 and PRO-75/100 enabling MBE and analysis in a single system. The key features include 1) excellent sample thickness and doping homogeneity; 2) layer growth with outstanding performance; 3) low background doping level; 4) excellent carrier density and mobility; and 5) very low defect density.