Evaluation of Sn-Doped Indium Oxide Film and Interface Properties on a-Si Formed by Reactive Plasma Deposition
Result of the Month
HAXPES Si 1s spectra before and after PDA.
The spectrum is around 1839 eV due to Si-Si bond, around 1844 eV due to SiOx bond.
Figure shows the Si 1s spectrum of the SiO2 (30 nm)/Si sample as a reference. Since there are few reference in the Si 1s spectrum so far, each spectrum was identified by measuring a sample with a known sample structure. The sample structure has been confirmed by spectroscopic ellipsometry.
Aiming to improve the performance of heterojunction Si solar cells, we evaluated the Sn-doped indium oxide (ITO) / a-Si structure using conventional and hard X-ray photoelectron spectroscopy (XPS, HAXPES), and the cause of the solar cell performance Identified deterioration. HAXPES allows non-destructive evaluation of the SiOx layer at the ITO / a-Si interface. The formation of SiOx at the ITO / a-Si interface increases the contact resistance, which can be reduced by post-deposition annealing (PDA). In addition, PDA facilitated Fermi level evaluation, ITO component precipitation in the a-Si layer, and increased interface roughness. Before the PDA, diffusion of a-Si Sn atoms was observed. In addition, PDA confirmed that Si atoms diffused into ITO. These reactions at the ITO / a-Si interface may be part of the deterioration factor of Si solar cells.
ECS Journal of Solid State Science and Technology, 8, Q101 (2019).
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