Photodriven Transient Picosecond Top‐Layer Semiconductor to Metal Phase‐Transition in p‐Doped Molybdenum Disulfide

Result of the Month

2H‐semiconductor to 1T‐metal top layer phase transition in p‐doped bulk 2H‐MoS2 from time‐resolved ESCA

Author: Prof. Dr. Svante Svensson Institute: ''Helmholtz-Zentrum Berlin (HZB)'' Advanced Materials
URL: https://doi.org/10.1002/adma.202006957
Date: 5/2021
Instruments: ARTOF-2

Visible light is shown to create a transient metallic S–Mo–S surface layer on bulk semiconducting p‐doped indirect‐bandgap 2H‐MoS2. Optically created electron–hole pairs separate in the surface band bending region of the p‐doped semiconducting crystal causing a transient accumulation of electrons in the surface region. This triggers a reversible 2H‐semiconductor to 1T‐metal phase‐transition of the surface layer. Electron–phonon coupling of the indirect‐bandgap p‐doped 2H‐MoS2 enables this efficient pathway even at a low density of excited electrons with a distinct optical excitation threshold and saturation behaviour. This mechanism needs to be taken into consideration when describing the surface properties of illuminated p‐doped 2H‐MoS2. In particular, light‐induced increased charge mobility and surface activation can cause and enhance the photocatalytic and photo assisted electrochemical hydrogen evolution reaction of water on 2H‐MoS2. Generally, it opens up for a way to control not only the surface of p‐doped 2H‐MoS2 but also related dichalcogenides and layered systems. The findings are based on the sensitivity of time‐resolved electron spectroscopy for chemical analysis with photon‐energy‐tuneable synchrotron radiation. “In fact, this study was enabled due to the very high transmission delivered by the Wide Angle ARTOF spectrometer. The study was performed at the FEMTOSPEX end station.  Here we can use pseudo pulses created by Pulse Picking by Resonant Excitation (PPRE) as well as conventional single bunch operation. In addition, we are also able to use pulses generated by slicing where a femtosecond laser pulse is the crucial component. The flux is then about 106 photons per second. However, the ARTOF enables core photoelectron spectroscopy. The time resolution in such a case is about 100 fs.” 

Figure Description 

2H‐semiconductor to 1T‐metal top layer phase transition in p‐doped bulk 2H‐MoS2 from time‐resolved ESCA: a) The principle of time‐resolved ESCA: optically pumped bulk p‐doped 2H‐MoS2 probed by X‐ray photoelectron spectroscopy at the S2p core levels with an angle‐resolved time‐of‐flight (ArTOF) electron spectrometer. b) Femtosecond time resolved S2p core level lines at 140 fs X‐ray/optical cross‐correlation (red line guide to the eye of experimental peak position). c) Temporal evolution of S2p3/2 peak positions (as resulting from a single‐component Gaussian fit) using the spectra from (b) shows the surface photovoltage shift and a fast phase transition. d) Picosecond time‐resolved S2p core‐level lines at 50 ps X‐ray/optical cross‐correlation. The S2p multiplet shifts to lower binding energy when approaching the temporal overlap. e) Center of mass (CoM) position of the S2p3/2 core level and width. The large increase in the peak width is revelatory of the 2H to 1T phase transition; the CoM peak position reflects the dynamics of both, the phase transition and the SPVS. 

Author´s Note

In this work, we establish how visible light itself can create a transient metallic top layer on bulk crystalline p‐doped 2H‐MoS2. Electron–hole pairs created by optical excitation separate in the surface band bending region of p‐doped semiconducting 2H‐MoS2. This causes a transient accumulation of electrons in the surface region, driving the top‐layer within several picoseconds from the p‐doped semiconducting 2H‐MoS2 into a sheet of metallic 1T‐MoS2 at a remarkably low optical fluence threshold. This mechanism has significant implications on how optically illuminated MoS2 surfaces behave, and will positively change the catalytic properties for water splitting. 

Experiment

The experiments were performed at the Plane Grating Monochromator (PGM) branch of the “FemtoSpeX” facility at Bessy II (UE56/1‐PGM) using the “FemtoSpeX Molecules and Surfaces” endstation. The monochromator was equipped with three gratings: 1200 lines mm−1, 400 lines mm−1, and 150 lines mm−1. The regular fill pattern of BESSY II consisted of several parts: The multibunch part, with 2 ns spacing between consecutive bunches, an ion clearing gap of 200 ns, and several isolated bunches with a higher current. Two of these isolated bunches were located within the ion clearing gap and one of them was excited by a radio transmitter effectively allowing single bunch operation at the endstation. This method is called pulse picking by resonant excitation (PPRE). The remaining isolated bunches were located in the multibunch part and were dedicated to the femtosecond slicing process. The strength of this beamline was thus the availability of regular single pulse synchrotron radiation (50 ps FWHM) and femtosecond X‐ray pulses (≈120 fs FWHM) with variable polarization by tuning the electron beam and beamline optics. The 150 lines mm−1 grating was used for the measurements using the femtosecond X‐ray pulses, yielding a resolution of E/ΔE ≃ 103 and the 1200 lines mm−1 grating for the picosecond measurements. A photon energy of 260 eV and vertical polarization were used. Combining the pulses delivered by the synchrotron, a synchronized femtosecond optical laser available at the beamline and a high transmission angle‐resolved time‐of‐flight electron spectrometer (ArToF) with an acceptance of 56° enabled the investigation of the dynamics of core levels. 

Authors:

Nomi L. A. N. Sorgenfrei, Erika Giangrisostomi, Raphael M. Jay, Danilo Kühn, Stefan Neppl, Ruslan Ovsyannikov, Hikmet Sezen, Svante Svensson, Alexander Föhlisch

Affiliations:

Dr. N. Sorgenfrei

Institut für Physik und Astronomie Universität Potsdam, Karl-Liebknecht-Straße 24/25 14476 Potsdam Germany

Current address: Institut für Methoden und Instrumentierung der Forschung mit Synchrotronstrahlung Helmholtz-Zentrum Berlin für Materialien und Energie GmbH Albert-Einstein-Str. 15 12489 Berlin Germany

Email Address: nomi.sorgenfrei@helmholtz-berlin.de

Dr. E. Giangrisostomi, Dr. S. Neppl, Dr. R. Ovsyannikov, Dr. H. Sezen

Institut für Methoden und Instrumentierung der Forschung mit Synchrotronstrahlung Helmholtz-Zentrum Berlin für Materialien und Energie GmbH Albert-Einstein-Str. 15 12489 Berlin Germany

Dr. R. Jay

Institut für Methoden und Instrumentierung der Forschung mit Synchrotronstrahlung Helmholtz-Zentrum Berlin für Materialien und Energie GmbH Albert-Einstein-Str. 15 12489 Berlin Germany

Current address: Department of Physics and Astronomy Uppsala University 75120 Uppsala Sweden

Dr. D. Kühn

Institut für Physik und Astronomie Universität Potsdam, Karl-Liebknecht-Straße 24/25 14476 Potsdam Germany

Prof. Dr. S. Svensson

Department of Physics and Astronomy Uppsala University Box 516 75120 Uppsala Sweden, Institut für Methoden und Instrumentierung der Forschung mit Synchrotronstrahlung Helmholtz-Zentrum Berlin für Materialien und Energie GmbH Albert-Einstein-Str. 15 12489 Berlin Germany 1 2 DECAY

Prof. Dr. A. Föhlisch

Institut für Physik und Astronomie Universität Potsdam, Karl-Liebknecht-Straße 24/25 14476 Potsdam Germany Institut für Methoden und Instrumentierung der Forschung mit Synchrotronstrahlung Helmholtz-Zentrum Berlin für Materialien und Energie GmbH Albert-Einstein-Str. 15 12489 Berlin Germany

Corresponding Author:

Dr. N. Sorgenfrei

nomi.sorgenfrei@helmholtz-berlin.de