Even–Odd Layer-Dependent Anomalous Hall Effect in Topological Magnet MnBi2Te4 Thin Films

Publication

Author: Yi-Fan Zhao, Ling-Jie Zhou, Fei Wang, Guang Wang, Tiancheng Song, Dmitry Ovchinnikov, Hemian Yi, Ruobing Mei, Ke Wang, Moses H W Chan, Chao-Xing Liu, Xiaodong Xu, Cui-Zu Chang Nano Letters
URL: https://doi.org/10.1021/acs.nanolett.1c02493
Date: 2021

Recently, MnBi2Te4 has been demonstrated to be an intrinsic magnetic topological insulator and the quantum anomalous Hall (QAH) effect was observed in exfoliated MnBi2Te4 flakes. Here, we used molecular beam epitaxy (MBE) to grow MnBi2Te4 films with thickness down to 1 septuple layer (SL) and performed thickness-dependent transport measurements. We observed a nonsquare hysteresis loop in the antiferromagnetic state for films with thickness greater than 2 SL. The hysteresis loop can be separated into two AH components. We demonstrated that one AH component with the larger coercive field is from the dominant MnBi2Te4 phase, whereas the other AH component with the smaller coercive field is from the minor Mn-doped Bi2Te3 phase. The extracted AH component of the MnBi2Te4 phase shows a clear even–odd layer-dependent behavior. Our studies reveal insights on how to optimize the MBE growth conditions to improve the quality of MnBi2Te4 films.

Even–Odd Layer-Dependent Anomalous Hall Effect in Topological Magnet MnBi2Te4 Thin Films

Publication

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