HAXPES Lab System  | © Scienta Omicron
The HAXPES Lab offers a complete solution optimized for the study of the structural and chemical properties of bulk and/or interfaces of materials.

HAXPES Lab

A Window to the Bulk

PESXPSHAXPES

  • Robust laboratory-based HAXPES solution with a high flux monochoromated X-ray source of 9.25 keV
  • Measurement time scales comparable to synchrotron experiments
  • Access to deep core levels, buried interfaces and the bulk of the material

Scienta Omicron's HAXPES Lab brings hard X-ray photoelectron spectroscopy (HAXPES) capability directly to the local laboratory environment. Using world class technology and expert engineering, the HAXPES Lab sets the standard for laboratory based high energy photoelectron spectroscopy. This novel system probes bulk samples properties and accesses deep core level electrons via photoelectron spectroscopy (XPS) without the need for a synchrotron end station. 

HAXPES Lab is designed to allow hard X-ray photoelectron spectroscopy (HAXPES) measurements in standard lab environments. The instrument offers the unique possibility to investigate bulk properties of various materials, analyse buried interfaces and access deep core levels. HAXPES Lab is a convenient to use turnkey UHV system which includes a 9.25 keV monochromated Ga Liquid Metal X-ray Source and a EW4000 energy analyser allowing for analysis in the full kinetic energy range up to 9252 eV. 

More Information

Study Bulk and Interfaces in your Home Laboratory

Photoelectron spectroscopy is a well-established tool for analysing a wide range of chemical and material properties. Traditional photoelectron spectroscopy instruments employ low energy X-ray sources limiting the kinetic energy of the photo-emitted electrons. Low kinetic energy electrons have short inelastic mean free paths (IMFP), confining analysis by traditional instruments to the top several nanometers of a material‘s surface. HAXPES, using higher kinetic energies, greatly extends the analysis depth.

While HAXPES measurements have been successfully deployed at synchrotrons, obtaining access to the required end stations is a significant challenge. The HAXPES Lab solves this problem and serves as a complete analytical tool by bringing cutting edge HAXPES directly to the end user’s laboratory. Complimentary soft X-ray sources and charge neutralisation are available. A comparison between different lab sources highlights the information depth advantage the Ga source provides. Information depth is defined as the region in which 90 % of the total signal originates. Beyond this advantage the monochromated Ga X-ray source provides higher flux than alternative hard X-ray lab sources.

Proof of Principal Measurements

The higher energy of the Ga Kα X-rays is exploited by the high intensity of the Excillum Ga liquid jet source provides a wider energy range than standard Al K Kα X-rays and deeper core levels can be reached, and at the same total instrument energy resolution as a standard monochromatized XPS instrument, allowing for high resolution HAXPES measurements in the home laboratory.

The higher penetration depth of Ga Kα X-rays is exploited by the high intensity of the Excillum Ga liquid jet source providing the greatest depth sensitivity from any laboratory hard X-ray system. As shown in the figure, the metal silicon peak is still visible through 50 nm of SiO2. Chemical information from deeper into the bulk than possible from Al or Cr based sources is possible in the HAXPES Lab with efficient time scales. 

Forefront of Materials Research

The HAXPES Lab places the user at the forefront of materials research with its novel analytical capabilities. Unprecedented measurements of bulk electrical and chemical properties are now possible. Users can easily execute a chemical analysis of real world samples without the need for destructive and artifact inducing surface preparation steps.

This capability is critical for many high impact measurements, including properly analysing buried layers in energy harvesting devices and batteries. Shown in Figure is a deep core Ti1S spectra from a single crystal rutile sample with a binding energy of 4969.7 eV. This measurement was acquired by HAXPES Lab in 35 minutes.

A real-world HAXPES Lab example analysis is shown in Figure on a complex oxide transistor stack. This structure exploits the presence of a 2D electron gas at the interface between the In2O3 and ZnO. Al 1s peaks are measurable, even when the Al is buried 33 nm deep. Core level Zr and In peaks, unmeasurable with standard XPS, are easy to find. These measurements were taken over 2-4 hours, thus proving the practical capabilities of the HAXPES Lab.

An Instrument Designed for your Research

The HAXPES Lab‘s compact design ensures that it is an efficient solution for laboratory based measurements. Fast and simple sample introduction is matched with a motorised analysis stage, resulting in an efficient and easy to use system. HAXPES Lab can further be equipped with a number of axial equipment, e.g. soft X-ray sources and charge neutralisation are available, be extended with, for example preparation chambers, and integrated into the Materials Innovations Platform (MIP), where instrumentation for growth and detailed characterisation of samples in-situ are combined in one platform.

Scienta Omicron‘s service contracts and worldwide service network provides ready support for our customers in all major markets.

HAXPES Lab: Hard X-ray Photoelectron Spectroscopy (HAXPES) Measurement

This video shows an animated view of the HAXPES Lab. The HAXPES Lab is designed to allow hard X-ray photoelectron spectroscopy (HAXPES) measurements in standard lab environments. The instrument offers the unique possibility to investigate bulk properties of various materials, analyze buried interfaces and access deep core levels. HAXPES Lab is a convenient to use, turnkey UHV system which includes a 9.25 keV monochromated Ga Liquid Metal X-ray Source and a EW4000 energy analyzer allowing for analysis in the full kinetic energy range up to 9252 eV.

Results

Effects of Nitridation on SiC/SiO2 Structures Studied by Hard X-ray Photoelectron Spectroscopy

Effects of Nitridation on SiC/SiO2 Structures Studied by Hard X-ray Photoelectron Spectroscopy

2020

This research paper investigates device-relevant stacks of SiC and SiO2 using energy-dependent X-ray photoelectron spectroscopy and combines results from both laboratory and synchrotron HAXPES systems to form a complete picture of...

Hard X-ray Photoelectron Spectroscopy on Heavy Atoms and Heavy-Element Containing Molecules using Synchrotron Radiation up to 35 keV at SPring-8 Undulator Beamlines

2019

We have recently initiated hard x-ray photoelectron spectroscopy experiments on heavy atoms and heavy-element containing molecules in gas phase by using synchrotron radiation up to 35 keV at SPring-8 undulator beamlines. We have successfully...

Evaluation of Sn-Doped Indium Oxide Film and Interface Properties on a-Si Formed by Reactive Plasma Deposition

2019

In pursuit for the improvement of heterojunction Si solar cell performance, we evaluated Sn-doped Indium oxide (ITO)/a-Si structure by using conventional and hard X-ray photoelectron spectroscopy (XPS, HAXPES) to identify the cause...

Evaluation of Sn-Doped Indium Oxide Film and Interface Properties on a-Si Formed by Reactive Plasma Deposition

Evaluation of Sn-Doped Indium Oxide Film and Interface Properties on a-Si Formed by Reactive Plasma Deposition

2019

Aiming to improve the performance of heterojunction Si solar cells, we evaluated the Sn-doped indium oxide (ITO) / a-Si structure using conventional and hard X-ray photoelectron spectroscopy (XPS, HAXPES), and the cause of the solar...

Reference systems

HAXPES and ESCA2SR System with the HAXPES Lab, Customised XPS,  EW4000, ARGUS,  XM 1000, and HIS 13 components  | © Scienta Omicron
172812

HAXPES Lab combined with XPS Lab

HAXPES provides unique characterisation of a wide range of materials systems including:

  • Buried interfaces, such as active electronic layers below a surface capping layer
  • Depth-profiling through heterostructures and e.g. layered low-dimension materials
  • Probing of dopants and contaminants in the bulk of a material
  • Many interfaces such as thin films  on a substrate

more
HAXPES Lab and Metal Jet  | © Scienta Omicron
180907

HAXPES Lab for Buried Interface Research

The system is used to study buried interfaces. The objective of the research is to improve the performance of solar cells and components based on semiconductor nanotechnology through the study of buried interfaces. The use of buried interfaces instead of surface layers could be a solution for improving the stability, quality and e.g. to push the performance of materials, such as electronic devices.

more
HAXPES Lab  Metal Jet | © Scienta Omicron
131016

EW4000 Analyser

Interface characterisation, especially solid/liquid interfaces of practically used materials and research on new innovative materials using advanced characterisation techniques.

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HAXPES Lab: A Window to the Bulk

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Scienta Omicron‘s HAXPES Lab brings hard X-ray photoelectron spectroscopy (HAXPES) capability directly to the local laboratory environment. This novel system probes bulk sample properties and accesses deep core level electrons via photoelectron spectroscopy (XPS) without the need for a synchrotron end station. Using world class technology and expert engineering, the HAXPES Lab sets the standard for laboratory based high energy photoelectron spectroscopy.

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