PRO 75/100 MBE
Research Tools for Epitaxial Layer Growth
- MBE system optimised for 4 inch wafer growth
- Large effusion cell capacity for increased up-time
- Flexible configurations, from topological insulators to semiconductors and metal oxides
- In-situ growth monitoring
- Reliable & fast sample transfer
- Growth process controlled by advanced software
- Designed as a module of a Materials Innovation Platform (MIP)
The PRO 75/100 MBEs are deposition tools for materials research under UHV conditions on substrates up to 4 inches in diameter. They are flexible system platforms suitable for a large range of MBE applications such as the growth of 2D materials, intermetallic compounds, oxide heterostructures or semiconductors. The PRO 75/100 MBEs include superior evaporation control software and offers multiple ports for in-situ characterisation.
The PRO 75/100 MBE systems are dedicated growth systems with a load lock chamber and with an optional preparation/storage chamber. The substrate sizes are either 3” (PRO 75) or 4” (PRO 100). The carefully designed chamber with up to 12 effusion cells shows excellent thickness uniformity for all substrate sizes.
The PRO 75/100 MBE systems are designed to fulfil the highest and most stringent requirements of modern thin film deposition. They are suitable and optimised for the growth of ultra-high purity semiconductors and related materials systems.
All PRO 75/100 MBE systems come with the MISTRAL control system together with a powerful evaporation control software. The control system is based on certified standard components for supreme reliability and provides a graphical status overview of all sensor values. With this software bundle, experiments can be conducted under well-controlled and reproducible conditions.
MISTRAL & Evaporation Control
The PRO 75/100 MBEs include the MISTRAL control system together with a powerful evaporation control software. The control system is based on certified standard components for supreme reliability and provides a graphical status overview of all sensor values. Integrated safety interlocks protect the UHV system in case of power failure or a drop in water flow.
The evaporation control software offers a powerful script editor for programming individual process recipes. Additionally, 24/7 data logging of all relevant system parameters is included.
With this software bundle, experiments can be conducted under well-controlled and reproducible conditions.
The PRO 75/100 MBEs are designed for forefront research. Our customers use their systems for a variety of materials systems, such as:
- Topological Insulators
- 2D Materials, e.g. Transition metal dichalcogenides (TMDCs)
- Intermetallic Compounds
- Thin Film Solar Cells
< 1×10-10 mbar
Doublewalled, designed for LN2
Up to 4“ diameter
* Specifications for standard configuration. Customisations can influence specifications.
Up to 12 ports: 6x DN100CF (6” OD) + 6x DN63CF (4.5” OD)
Equipped with Viewport Shutters
Growth control software included
Quartz Micro Balance
Beam Flux Monitor
Quadrupole mass analyser (RGA)
For full specifications and more information about product options, please do not hesitate to contact your local sales representative.
Phase Identification and Ordered Vacancy Imaging in Epitaxial Metallic Ta2N Thin Films
Epitaxial transition metal nitrides (TMNs) are an emerging class of crystalline thin film metals that can be heteroepitaxially integrated with common group III-nitride semiconductors such as GaN and AlN. Within a binary family of...
Crystal Field Model Simulations of Magnetic Response of Pairs, Triplets and Quartets of Mn3+ ions in GaN
A ferromagnetic coupling between localized Mn spins was predicted in a series of ab initio and tight binding calculations and experimentally verified for the dilute magnetic semiconductor Ga1−xMnxN. In the limit of small Mn concentrations,...
MBE Solutions: Modular MBE Systems
The MBE Solution is comprised of Lab10 MBE, EVO-25/-50 and PRO-75/100 enabling MBE and analysis in a single system. The key features include 1) excellent sample thickness and doping homogeneity; 2) layer growth with outstanding performance; 3) low background doping level; 4) excellent carrier density and mobility; and 5) very low defect density.