RHEED 30 kV
Complete RHEED Solution
- High brightness and small diameter beam
- Beam optimised and aligned
- Beam rocking available
- Fully computerised power supply and remote control
Reflection High-Energy Electron Diffraction (RHEED) is an in-situ characterisation tool, often used in Molecular Beam Epitaxy (MBE) systems. Due to the surface sensitivity of the technique, the formation of individual layers can be monitored during the growth. A complete RHEED system consists of a fluorescent screen on lead glass, an electron source, a power supply and a control unit with remote control.
We offer RHEED electron sources in the range of 15 to 30 keV. By combining electrostatic and magnetic elements, the source produces a high brightness on a small size spot, with low beam divergence, and with low outgassing rate. Beam rocking allows the precise adjustment and variation of the incidence angle using electronic control. The gun mounts via a DN40CF (2.75” OD) flange to the chamber. The RHEED system is fully bakeable. Operation at higher pressure requires a differential pumping option.
The power supply comes in a 19” rack-mounted case and offers gun settings, such as energy, filament current, and beam intensity, which are displayed using digital readouts. The power supply is remote-controlled by a compact control box to adjust the beam intensity, focus, and position. The electron beam can be turned on and off using the electronic beam blanking, keeping the electron load on the sample very low. The blanking signal can also be triggered with external signals.
10 – 30 kV
< 70 µm
For full specifications and more information about product options, please do not hesitate to contact your local sales representative.
Molecular Beam Epitaxy Growth of GaAsBi Using As2 and As4
100 nm thick GaAsBi layers were grown at a range of temperatures using both As2 and As4. Measurements of Bi incorporation based on room temperature photoluminescence spectra indicate that the growth temperature dependence of Bi incorporation...