Two-Dimensional Weak Anti-Localization in Bi2Te3 Thin Film Grown on Si(111)-(7 × 7) Surface by Molecular Beam Epitaxy
Publication
Author: Anupam Roy, Samaresh Guchhait, Sushant Sonde, Rik Dey, Tanmoy Pramanik, Amritesh Rai, Hema C P Movva, Luigi Colombo, Sanjay K Banerjee
Applied Physics Letters URL: https://doi.org/10.1063/1.4803018 Date: 2013
Instruments:
RHEED 15 kV, VT SPM Lab
We report on low temperature transport studies of Bi2Te3 topological insulator thin films grown on Si(111)-(7 × 7) surface by molecular beam epitaxy. A sharp increase in the magnetoresistance with magnetic field at low temperature indicates the existence of weak anti-localization. The measured weak anti-localization effect agrees well with the Hikami-Larkin-Nagaoka model, and the extracted phase coherence length shows a power-law dependence with temperature indicating the existence of a two-dimensional system. An insulating ground state has also been observed at low temperature showing a logarithmic divergence of the resistance that appears to be the influence of electron-electron interaction in a two-dimensional system.
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